Estimate carriers, conductivity, resistivity, and drift current quickly. Compare temperature effects using plots and tables. Useful for coursework, experiments, device studies, and concept revision.
Use cm-based mobility and density units. The calculator returns conductivity in both S/cm and S/m.
The plot shows how conductivity and intrinsic carrier concentration vary across the selected temperature range.
| Material Case | Temperature (K) | Band Gap (eV) | μn (cm²/V·s) | μp (cm²/V·s) | ni (cm-3) | Conductivity (S/cm) |
|---|---|---|---|---|---|---|
| Silicon at 300 K | 300 | 1.12 | 1,350 | 480 | 6.6759e+9 | 1.9574e-6 |
| Germanium at 300 K | 300 | 0.66 | 3,900 | 1,900 | 2.2586e+13 | 2.0988e-2 |
| Gallium Arsenide at 300 K | 300 | 1.42 | 8,500 | 400 | 2.1435e+6 | 3.0565e-9 |
Intrinsic carrier concentration
ni = √(NcNv) × exp[ -Eg / (2kT) ]
Intrinsic conductivity
σ = q × ni × (μn + μp)
Resistivity
ρ = 1 / σ
Current density
J = σ × E
Here, q is electron charge, k is Boltzmann’s constant, T is absolute temperature, Eg is band gap, Nc and Nv are effective density states, and μn, μp are carrier mobilities.
This model is useful for estimating ideal intrinsic behavior. Real materials can deviate because of impurity levels, scattering changes, temperature-dependent mobility, and non-ideal band structure effects.
It means the semiconductor is pure and undoped. Electrons and holes are generated thermally, and their concentrations are equal under intrinsic conditions.
Higher temperature creates more electron-hole pairs. This usually raises intrinsic carrier concentration strongly, which increases conductivity despite mobility changes.
They describe the effective density of available states in the conduction and valence bands. They help estimate intrinsic carrier concentration more realistically.
Temperature uses kelvin. Mobilities use cm²/V·s. Nc and Nv use cm-3. Conductivity is reported in S/cm and S/m.
Not directly. This page is built for intrinsic behavior only. Doped materials need donor, acceptor, and charge-neutrality relations.
A larger band gap sharply reduces thermal carrier generation. That makes intrinsic concentration and conductivity much lower at the same temperature.
It shows the expected conduction current per unit area under the entered electric field. It is calculated from conductivity multiplied by field strength.
Yes. It helps connect band gap, thermal activation, carrier mobility, and electrical response in a simple, visual learning format.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.